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SiC Crystal


4 inch semi-insulating 6H-SiC wafer

 
4H-SiC
等级 (Grade)
Grade I
Grade II
直径 (Diameter)
100.0 mm 0/-0.5 mm
厚度 (Thickness)
350/500 μm ± 25μm or Customer Specification
主定位边方向 (Primary Flat Orientation)
Perpendicular to <11-20> ± 5.0°
主定位边长度 (Primary Flat Length)
32.5 mm ± 2 mm
次定位边方向 (Secondary Flat Orientation)
90° CW from Primary flat ± 5.0°
次定位边长度 (Secondary Flat Length)
18.0 mm ± 2.0 mm
正角晶片方向 (On axis Wafer Orientation)
{0001} ± 0.25°
偏角晶片方向 (Off axis Wafer Orientation)
4.0° toward <11-20> ± 0.5°
8.0° toward <11-20> ± 0.5°
边缘 (Edge Exclusion)
2.0 mm
总厚度变化/弯曲度/(TTV/Bow)
< 20μm / < 35μm
微管密度 (Micropipe Density)
< 30个/cm-2
< 50个/cm-2
电阻率 (Resistivity)
导电 (Conductive)
0.01~0.03 Ω×cm
0.01~0.1Ω×cm
半绝缘 (Semi-insulating)
> 105 Ω×cm
表面加工 (Surface Finish)
Both Polished (Si face: Ra < 0.2 nm) or Customer Specification

3 inch semi-insulating 6H-SiC wafer

产品
4H-SiC & 6H-SiC
等级 (Grade)
Grade I
Grade II
直径 (Diameter)
76.2 mm ± 0.38 mm
厚度 (Thickness)
350 μm ± 25μm or Customer Specification
主定位边方向 (Primary Flat Orientation)
Perpendicular to <11-20> ± 5.0°
主定位边长度 (Primary Flat Length)
22.22 mm ± 3.17 mm
次定位边方向 (Secondary Flat Orientation)
90° CW from Primary flat ± 5.0°
次定位边长度 (Secondary Flat Length)
11.18 mm ± 1.52 mm
正角晶片方向 (On axis Wafer Orientation)
{0001} ± 0.25°
偏角晶片方向 (Off axis Wafer Orientation)
4.0° toward <11-20> ± 0.5°
8.0° toward <11-20> ± 0.5°
边缘 (Edge Exclusion)
2.0 mm
总厚度变化/弯曲度/(TTV/Bow)
< 15μm / < 25μm
微管密度 (Micropipe Density)
< 10个/cm-2
< 30个/cm-2
电阻率 (Resistivity)
导电 (Conductive)
0.01~0.03 Ω×cm
0.01~0.1Ω×cm
半绝缘 (Semi-insulating)
> 105 Ω×cm
表面加工 (Surface Finish)
Both Polished (Si face: Ra < 0.2 nm) or Customer Specification

2 inch semi-insulating 6H-SiC wafer

产品
4H-SiC & 6H-SiC
等级 (Grade)
Grade I
Grade II
直径 (Diameter)
50.8 mm ± 0.38 mm
厚度 (Thickness)
330/430 μm ± 25μm or Customer Specification
主定位边方向 (Primary Flat Orientation)
Perpendicular to <11-20> ± 5.0°
主定位边长度 (Primary Flat Length)
15.88 mm ± 1.65 mm
次定位边方向 (Secondary Flat Orientation)
90° CW from Primary flat ± 5.0°
次定位边长度 (Secondary Flat Length)
8.0 mm ± 1.65 mm
正角晶片方向 (On axis Wafer Orientation)
{0001} ± 0.25°
偏角晶片方向 (Off axis Wafer Orientation)
4.0° toward <11-20> ± 0.5°
8.0° toward <11-20> ± 0.5°
边缘 (Edge Exclusion)
1.0 mm
总厚度变化/弯曲度/ (TTV/Bow)
< 15μm / < 15μm
微管密度 (Micropipe Density)
< 10个/cm-2
< 30个/cm-2
电阻率 (Resistivity)
导电 (Conductive)
0.01~0.03 Ω×cm
0.01~0.1Ω×cm
半绝缘 (Semi-insulating)
> 105 Ω×cm
表面加工 (Surface Finish)
Both Polished (Si face: Ra < 0.2 nm) or Customer Specification

VCSA_43Cb0s1T/